Opis stanowiska
„The project seeks to develop extremely low-power spintronic based nonvolatile memory and logic technologies with infinite endurance, through experimental studies of new quantum materials and devices that can greatly increase the efficiency of magnetization switching. With these materials, we will realize physical phenomena and device functionalities that are not possible in traditional polycrystalline metal-based spintronic. Range of hybrid materials will be designed, synthesized, dynamically tunned structurally and electronically, and integrated into the state-of-the-art MRAM devices.”
Nasze wymagania
- doctoral degree in the discipline electronics, physics, materials engineering or related obtained in the year of employment in the project or in the 7 years before 1 January of the year of employment in the project,
- degree held: recognized researcher (R2),
- English at least at B2 level,
- expertise in a thin film growth using various vacuum techniques (PLD, sputtering),
- experience in thin film measurement techniques (XRR, XRD, VSM etc),
- previous experience in the fabrication of micro devices in the cleanroom,
- full-time involvement in the project,
- passion for the implementation of an ambitious scientific project,
- scientific and organizational activities as well as active participation in conferences and symposiums.
Zakres obowiązków
- details attached
Dokumenty wymagane do rekrutacji
- job application, cv, personal questionnaire,
- copy of diplomas or other certificates attesting to qualifications,
- cover letter containing a description of completed projects,
- documented scientific and research achievements,
- a reference letter confirming acquired skills and experience,
- a document confirming language proficiency at least at B2 level.